• DocumentCode
    1907424
  • Title

    Ambipolarity characterization of tunneling field-effect transistors

  • Author

    Jang, Jung-Shik ; Choi, Woo Young

  • Author_Institution
    Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
  • fYear
    2010
  • fDate
    13-14 June 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A new transistor parameter “ambipolarity factor (ν)” has been defined for SOI tunneling field-effect transistors (TFETs) and its usefulness has been discussed. The proposed ν indicates the severity of ambipolarity of TFETs quantitatively. Therefore, it is expected that ν will be helpful to suppressing OFF current for low-power consumption.
  • Keywords
    field effect transistors; silicon-on-insulator; tunnelling; SOI; abipolarity characterization; ambipolarity factor; transistor parameter; tunneling field effect transistors; Junctions; Leakage current; Logic gates; MOSFET circuits; Subthreshold current; Transistors; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2010
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-7727-2
  • Electronic_ISBN
    978-1-4244-7726-5
  • Type

    conf

  • DOI
    10.1109/SNW.2010.5562556
  • Filename
    5562556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1907424