Title :
Ambipolarity characterization of tunneling field-effect transistors
Author :
Jang, Jung-Shik ; Choi, Woo Young
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Abstract :
A new transistor parameter “ambipolarity factor (ν)” has been defined for SOI tunneling field-effect transistors (TFETs) and its usefulness has been discussed. The proposed ν indicates the severity of ambipolarity of TFETs quantitatively. Therefore, it is expected that ν will be helpful to suppressing OFF current for low-power consumption.
Keywords :
field effect transistors; silicon-on-insulator; tunnelling; SOI; abipolarity characterization; ambipolarity factor; transistor parameter; tunneling field effect transistors; Junctions; Leakage current; Logic gates; MOSFET circuits; Subthreshold current; Transistors; Tunneling;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562556
