DocumentCode
1907580
Title
MOSFET Mobility Degradation due to Interface-States, generated by Fowler-Nordheim Electron Injection
Author
Dejenfelt, A.T. ; Engström, O.
Author_Institution
Department of Solid State Electronics, Chalmers University of Technology, 412 96 Göteborg, Sweden; Cypress Semiconductor, 3901 North First St., San Jose, CA 95134-1599, USA
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
461
Lastpage
464
Abstract
The degradation of the MOSFET inversion channel mobility due to generated interface-states was studied, generating the interface-states by Fowler-Nordheim injection. The inversion channel carrier mobility was directly related to the interface-state density and was not affected by the generated oxide charge. The mobility degradation due to the interface-states was in agreement with previous degradation data based on fixed interface charge by Sun and Plummer [1], provided the mobility was measured at the point of maximum transconductance, and only the charged fraction of the total interface-state spectrum under strong inversion conditions was included in the mobility model.
Keywords
Charge measurement; Current measurement; Degradation; Electron mobility; MOSFET circuits; Power MOSFET; Rough surfaces; Scattering; Sun; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435290
Link To Document