• DocumentCode
    1907589
  • Title

    Impact of surface orientation on Vth variability of FinFET

  • Author

    Wu, Yu-Sheng ; Fan, Ming-Long ; Su, Pin

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2010
  • fDate
    13-14 June 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work, we investigate the Vth variability of Si- and Ge-channel FinFET with various surface orientations using analytical solution of Schrδdinger equation. The theoretical model provides us a physical and efficient method to explore the impact of quantum-confinement effect. In addition, to validate the results predicted by the theoretical model, we also perform the 3-D atomistic simulation to assess the Vth dispersion due to fin line-edge-roughness (fin-LER) for FinFET with various surface orientations.
  • Keywords
    MOSFET; Schrodinger equation; quantum confined Stark effect; 3D atomistic simulation; Ge-channel FinFET; Schrodinger equation; Si-channel FinFET; Vth dispersion; Vth variability; fin line-edge-roughness; fin-LER; quantum-confinement effect; surface orientation; Approximation methods; Equations; FinFETs; Mathematical model; Potential well; Sensitivity; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2010
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-7727-2
  • Electronic_ISBN
    978-1-4244-7726-5
  • Type

    conf

  • DOI
    10.1109/SNW.2010.5562562
  • Filename
    5562562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1907589