Low resistive ALD TiN metal gate using TDMAT precursor for high performance MOSFET

The paper have demonstrated the effect of the resistivity reduction of the atomic layer deposited (ALD) TiN film using TDMAT precursor by modifying the NH₃ process (both initial exposure and post deposition annealing (PDA) processes). It was found that the resistivity of the ALD TiN was significantly reduced by extending NH₃ exposure time and increasing PDA temperature by 700°C. Moreover, by employing the NH₃ PDA, an increase in TiN peak intensity was detected from Ti 2p by XPS analysis and Ti : N ratio of approximately 1:1 was achieved. As a result of the evaluation of the electrical characteristics of TiN-gate MOSFETs, superior performance was achieved in the case of ALD TiN.