• DocumentCode
    1907611
  • Title

    Transconductance degradation and its correlation to the second substrate current hump of submicron NMOS LDD transistors

  • Author

    Gutierrez D., Edmundo A. ; Deferm, Ludo ; Declerck, Gilbert

  • Author_Institution
    IMEC, Kapeldreef 75, B-3001, Leuven, Belgium; National Institute of Astrophysics, Optics and Electronics (INAOE)-Puebla, México.
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    449
  • Lastpage
    452
  • Abstract
    An extra degradation of the transconductance is observed in NMOS LDD devices which show the second substrate current hump [1]. In this paper the second substrate current hump is analysed and it is shown that the transconductance degradation is directly related to the lateral electric field at the source side.
  • Keywords
    Degradation; Doping; Electric resistance; Equations; MOS devices; Optical scattering; Surface resistance; Thermal resistance; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435291
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1907611