Title :
InP-diode laser stack pumped Ho:YAG or Cr:ZnSe thin disk lasers
Author :
Renz, Gunther ; Speiser, Jochen ; Giesen, Adolf
Author_Institution :
Inst. of Tech. Phys., German Aerosp. Center, Stuttgart, Germany
Abstract :
In this report, InP-diode laser stacks with on-chip integrated gratings of narrow band (2 nm) emission at 1.908 μm (QPC Laser) with maximum output power of 40 W will be used to pump the laser active materials of crystalline Ho:YAG or crystalline Cr:ZnSe in a 24 pump pass thin disk module (Dausinger + Giesen GmbH).
Keywords :
III-V semiconductors; chromium; diffraction gratings; holmium; indium compounds; laser beams; optical pumping; semiconductor lasers; yttrium compounds; zinc compounds; InP; InP-diode laser stacks; QPC laser; YAG:Ho; ZnSe:Cr; crystalline Cr:ZnSe laser active materials; crystalline Ho:YAG laser active materials; maximum output power; on-chip integrated gratings; power 40 W; thin disk lasers; wavelength 1.908 mum; Laser excitation; Laser theory; Laser transitions; Power generation; Power lasers; Pump lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
DOI :
10.1109/CLEOE-IQEC.2013.6800668
