Title :
Analysis of post-stress effects in passivated MOSFET´s after Hot-Carrier stress
Author :
de Schrijver, E. ; Heremans, P. ; Bellens, Rik ; Groeseneken, G. ; Maes, H.E.
Author_Institution :
IMEC vzw, Kapeldreef 75, 3001 Leuven, Belgium
Abstract :
Passivated n-channel transistors of different technologies still show interface trap density increases after termination of hot-carrier stress. A systematic study of this effect and its dependence on various parameters was made, using the Charge-Pumping technique. A tentative model is presented, that explains the observed phenomena.
Keywords :
Charge pumps; Degradation; Electron traps; Hot carrier effects; Hot carriers; MOSFETs; Microelectronics; Stress; Transconductance; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
