DocumentCode
1907750
Title
Design of a CMOS-compatible field-emission magnetic sensor with adjustable sensitivity
Author
Garner, D.M. ; French, P.J. ; Hui, G. ; Fung, A.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK
fYear
2003
fDate
7-11 July 2003
Firstpage
71
Lastpage
72
Abstract
A magnetic sensor based upon the effect of the Lorentz force on vacuum electron motion has been presented. The device has its electrodes in the plane of the silicon substrate, allowing fields perpendicular to the substrate to be detected.
Keywords
electron field emission; magnetic sensors; sensitivity; CMOS compatible field emission magnetic sensor; Lorentz force; Si; electrodes; sensitivity; silicon substrate; vacuum electron motion; Anodes; Cathodes; Electrodes; Electron beams; Etching; Magnetic field measurement; Magnetic sensors; Silicon; Voice mail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location
Osaka, Japan
Print_ISBN
4-8181-9515-4
Type
conf
DOI
10.1109/IVMC.2003.1222988
Filename
1222988
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