Title :
Threshold voltage and I-V characteristics of cylindrical, surrounding- electrolyte ISFET
Author :
Dutta, Jiten Ch ; Warjri, Phibadondor S.
Author_Institution :
Dept. of Electron. & Commun. Eng., Tezpur Univ., Tezpur, India
Abstract :
This paper describes the analytical model of threshold voltage and I-V characteristics of cylindrical, surrounding - electrolyte ISFET realized by replacing the surrounding metal gate of cylindrical / surrounding gate MOSFET with a series combination of a reference electrode and an electrolyte solution. The standard equations of cylindrical/ surrounding gate MOSFET, obtained by solving cylindrical form of Poisson´s equation have been extended to cylindrical ISFET and then integrated with the electrolyte-oxide interface potential, dependence on pH of electrolyte solution. The analysis of charge and potential profiles related to electrolyte solution is carried out by solving Poisson-Boltzmann´s equation in cylindrical coordinates.
Keywords :
Boltzmann equation; MOSFET; Poisson equation; electrolytes; ion sensitive field effect transistors; pH; I-V characteristics; Poisson equation; Poisson-Boltzmann equation; charge profile; cylindrical MOSFET; cylindrical coordinates; cylindrical surrounding-electrolyte ISFET; electrolyte solution; electrolyte-oxide interface potential; metal gate; pH; reference electrode; surrounding gate MOSFET; threshold voltage; Electrodes; Logic gates; MOSFET circuits; SPICE; Shape; Poisson-Boltzmann equation; cylindrical surrounding electrolyte ISFET; pH;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
DOI :
10.1109/ICDCSyst.2012.6188658
