Threshold voltage and I-V characteristics of cylindrical, surrounding- electrolyte ISFET

Author

Dutta, Jiten Ch ; Warjri, Phibadondor S.

Author_Institution

Dept. of Electron. & Commun. Eng., Tezpur Univ., Tezpur, India

fYear

2012

fDate

15-16 March 2012

Firstpage

678

Lastpage

680

Abstract

This paper describes the analytical model of threshold voltage and I-V characteristics of cylindrical, surrounding - electrolyte ISFET realized by replacing the surrounding metal gate of cylindrical / surrounding gate MOSFET with a series combination of a reference electrode and an electrolyte solution. The standard equations of cylindrical/ surrounding gate MOSFET, obtained by solving cylindrical form of Poisson´s equation have been extended to cylindrical ISFET and then integrated with the electrolyte-oxide interface potential, dependence on pH of electrolyte solution. The analysis of charge and potential profiles related to electrolyte solution is carried out by solving Poisson-Boltzmann´s equation in cylindrical coordinates.

Keywords

Boltzmann equation; MOSFET; Poisson equation; electrolytes; ion sensitive field effect transistors; pH; I-V characteristics; Poisson equation; Poisson-Boltzmann equation; charge profile; cylindrical MOSFET; cylindrical coordinates; cylindrical surrounding-electrolyte ISFET; electrolyte solution; electrolyte-oxide interface potential; metal gate; pH; reference electrode; surrounding gate MOSFET; threshold voltage; Electrodes; Logic gates; MOSFET circuits; SPICE; Shape; Poisson-Boltzmann equation; cylindrical surrounding electrolyte ISFET; pH;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICDCS), 2012 International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4577-1545-7

Type

conf

DOI

10.1109/ICDCSyst.2012.6188658

Filename

6188658