Title :
Modelization and fabrication of ISFET based sensors
Author :
Merlos, A. ; Cané, C. ; Bausells, J. ; Esteve, J.
Author_Institution :
Centre Nacional de Microelectronica (CSIC), Campus Universitat Autònoma de Barcelona, 08193-Bellaterra, SPAIN
Abstract :
An optimization of the fabrication technology has been carried out in order to fix the best parameters for ISFET devices. The main parameters taken into account are threshold voltage, which is adjusted by ion implantation and drain and source series resistances by optimizing dose, energy and post annealing processes. SUPREM-3 simulations have been used for this purpose. An electrical model of the ISFET to be included in SPICE simulator has also been developed and permits the determination of the electrical behaviour of the chemical sensor.
Keywords :
CMOS technology; Chemical sensors; Chemical technology; Circuits; Fabrication; Intelligent sensors; Microelectronics; Passivation; SPICE; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
