Dry etching of bottom anti-reflective-coat and its application to gate length control

Author

Nishizawa, A. ; Tokashiki, IC ; Horiba, S. ; Miyamoto, Hideaki

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan

fYear

1997

fDate

6-8 Oct 1997

Abstract

Dry etch characteristics of the organic bottom anti-reflective-coat (BARC) are studied and applied to control WSi_x polycide gate length precisely in quarter micron region, In the plasma of O₂/Cl₂ gas mixture, CD (critical dimension) control of less than 0.02 μm, as well as an infinite selective etching of BARC to WSi_x film, was established by optimizing O₂ ratio. This optimized BARC process can be applicable to 0.25 μm level devices for increasing the pass chip yield

Keywords

antireflection coatings; integrated circuit yield; photolithography; sputter etching; tungsten compounds; 0.25 micron; O₂-Cl₂; WSi; bottom anti-reflective-coat; critical dimension control; dry etching; gate length control; infinite selective etching; optimized BARC process; pass chip yield; plasma etching; polycide gate; Dry etching; Optical control; Optical films; Optical reflection; Optical surface waves; Plasma applications; Plasma materials processing; Plasma properties; Plasma sources; Sputter etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-3752-2

Type

conf

DOI

10.1109/ISSM.1997.664598

Filename

664598