Title :
Dry etching of bottom anti-reflective-coat and its application to gate length control
Author :
Nishizawa, A. ; Tokashiki, IC ; Horiba, S. ; Miyamoto, Hideaki
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
Dry etch characteristics of the organic bottom anti-reflective-coat (BARC) are studied and applied to control WSix polycide gate length precisely in quarter micron region, In the plasma of O2/Cl2 gas mixture, CD (critical dimension) control of less than 0.02 μm, as well as an infinite selective etching of BARC to WSix film, was established by optimizing O2 ratio. This optimized BARC process can be applicable to 0.25 μm level devices for increasing the pass chip yield
Keywords :
antireflection coatings; integrated circuit yield; photolithography; sputter etching; tungsten compounds; 0.25 micron; O2-Cl2; WSi; bottom anti-reflective-coat; critical dimension control; dry etching; gate length control; infinite selective etching; optimized BARC process; pass chip yield; plasma etching; polycide gate; Dry etching; Optical control; Optical films; Optical reflection; Optical surface waves; Plasma applications; Plasma materials processing; Plasma properties; Plasma sources; Sputter etching;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3752-2
DOI :
10.1109/ISSM.1997.664598
