Intrinsic parameter fluctuations on current mirror circuit with different aspect ratio of 16-nm multi-gate MOSFET

Author

Cheng, Hui-Wen ; Yiu, Chun-Yen ; Khaing, Thet-Thet ; Li, Yiming

Author_Institution

Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2010

fDate

13-14 June 2010

Firstpage

1

Lastpage

2

Abstract

In this study, we examine the dependency of current mirror circuit characteristics on channel-fin aspect-ratio (AR = fin height / the fin width) of 16-nm multi-gate MOSFET and device´s intrinsic parameter fluctuation including metal-gate work-function fluctuation (WKF), random-dopant fluctuation (RDF), process-variation effect (PVE), and oxide-thickness fluctuation (OTF). For n- and p-type current mirror circuits, the fluctuations dominated by RDF and WKF, respectively, could be suppressed by high AR of devices due to improved driving current. For n- and p-type current mirror circuits, IOUT fluctuation dominated by RDF and WKF in FinFET (AR = 2) is 2.8 and 2.5 times smaller than that of quasi-planar (AR = 0.5) device, respectively.

Keywords

MOSFET; current mirrors; random processes; PVE; RDF; WKF; channel-fin aspect-ratio; current mirror circuit; intrinsic parameter fluctuation; metal-gate work-function fluctuation; multigate MOSFET; oxide-thickness fluctuation; process-variation effect; random-dopant fluctuation; size 16 nm; FinFETs; Fluctuations; Logic gates; Metals; Mirrors; Resource description framework; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop (SNW), 2010

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-7727-2

Electronic_ISBN

978-1-4244-7726-5

Type

conf

DOI

10.1109/SNW.2010.5562570

Filename

5562570