Title :
W-band InGaAs/InP PIN diode monolithic integrated switches
Author :
Alekseev, E. ; Pavlidis, D. ; Dickmann, M. ; Hackbarth, T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The design, fabrication, and experimental characteristics of InGaAs PIN diodes are presented for InP-based W-band monolithic integrated switches. The diodes with 10 /spl mu/m-diameter were used and showed a breakdown voltage of 17 V, a turn-on voltage of 0.36 V, and a switching cutoff frequency of 6.3 THz. The monolithic integrated switches employed microstrip transmission lines and backside via holes for low-inductance signal grounding. A radial stub-based design was used for on-chip biasing, and the high-frequency characteristics of the switches were verified by on-wafer W-band testing. The SPST PIN monolithic switch demonstrated 25 dB isolation, 1.3 dB insertion loss, and 0.8 dB reflection loss at 83 GHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; millimetre wave diodes; p-i-n diodes; semiconductor switches; 83 GHz; InGaAs PIN diode; InGaAs-InP; SPST switch; W-band monolithic integrated switch; backside via hole; breakdown voltage; cutoff frequency; high-frequency characteristics; insertion loss; isolation; microstrip transmission line; on-chip biasing; on-wafer testing; radial stub; reflection loss; signal grounding; turn-on voltage; Breakdown voltage; Cutoff frequency; Diodes; Fabrication; Grounding; Indium gallium arsenide; Indium phosphide; Microstrip; Switches; Transmission lines;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-3504-X
DOI :
10.1109/GAAS.1996.567888
