Title :
Mobility enhancement in strained Si NMOSFETs with HfO/sub 2/ gate dielectrics
Author :
Rim, K. ; Gusev, E.P. ; D´Emic, C. ; Kanarsky, T. ; Chen, H. ; Chu, J. ; Ott, J. ; Chan, K. ; Boyd, D. ; Mazzeo, V. ; Lee, B.H. ; Mocuta, A. ; Welser, J. ; Cohen, S.L. ; Leong, M. ; Wong, H.-S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Integration of strained Si and high-K gate dielectric is demonstrated for the first time. While providing a >1000/spl times/ gate leakage reduction, strained Si NMOSFETs with HfO/sub 2/ gate dielectric exhibit 60% higher mobility than the unstrained Si device with HfO/sub 2/ gate dielectrics, and 30% higher mobility than the conventional Si NMOSFETs with SiO/sub 2/ gate dielectric (universal MOSFET mobility).
Keywords :
MOSFET; carrier mobility; dielectric thin films; elemental semiconductors; hafnium compounds; internal stresses; leakage currents; permittivity; silicon; HfO/sub 2/ gate dielectrics; HfO/sub 2/-Si; NMOSFET mobility; SiO/sub 2/ gate dielectric; gate leakage reduction; mobility enhancement; strained Si NMOSFET; strained Si/high-k gate dielectric integration; universal MOSFET mobility; unstrained Si device; Degradation; Dielectric devices; Dielectric materials; Electron mobility; Fabrication; Gate leakage; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015368
