Title :
The field emitter array for neutralization of positive ion charge in ion implantation system
Author :
Ikejiri, T. ; Sakai, S. ; Umisedo, S. ; Naito, K. ; Nagai, N. ; Nagao, M. ; Kanemaru, S. ; Ishikawa, J. ; Gotoh, Y. ; Tsuji, H.
Author_Institution :
Nissin Ion Equipment Co. Ltd., Kyoto, Japan
Abstract :
Focuses on the design issues and process calibrations of the fabrication for silicon field emission devices on N type 100 mm diameter silicon wafer. The proposed solution is to fabricate emitter die with 20 arrays of field emitters with each array contains 796 arrays.
Keywords :
elemental semiconductors; field emitter arrays; ion implantation; silicon; Si; field emitter array; ion implantation system; neutralization; positive ion charge; silicon field emission devices; silicon wafer; Contamination; Electrodes; Electron emission; Field emitter arrays; Ion beams; Ion implantation; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Plasma temperature;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1222995
