Title :
A power efficient and constant-gm 1.8 V CMOS operational transconductance amplifier with rail-to-rail input and output ranges for charge pump in phase-locked loop
Author :
Hati, Manas Kumar ; Bhattacharyya, Tarun K.
Author_Institution :
Adv. Technol. Dev. Centre, Indian Inst. of Technol., Kharagpur, India
Abstract :
This paper presents a power efficient and constant-gm 1.8 V CMOS operational transconductance amplifier with rail-to-rail input and output ranges implemented in 180 nm CMOS process technology. The op-amp consists of constant-gm rail-to-rail input stage, folded cascode summing stage and class AB output stage. This operational transconductance amplifier provides a dc gain of 60.49dB, phase margin 59.64°, and unity gain frequency 538.3MHz while driving a 1pF capacitance and power consumption is 2.13mW from a 1.8 V power supply. It is simply a compound structure, consists of NMOS and PMOS differential pairs are connected in parallel. The compound structure achieves rail-to-rail operation; however, it produces variations of the transconductance 6.5 % and dc gain varies from 57dB-60.50dB over the input common mode range. This paper discusses sources and solutions for the transconductance variations using 1:3 current mirror techniques.
Keywords :
CMOS analogue integrated circuits; capacitance; charge pump circuits; current mirrors; operational amplifiers; phase locked loops; power consumption; CMOS operational transconductance amplifier; CMOS process technology; NMOS; PMOS; capacitance; charge pump; class AB output stage; current mirror technique; dc gain; folded cascode summing stage; frequency 538.3 MHz; gain 57 dB to 60.5 dB; op-amp; phase-locked loop; power 2.13 mW; power consumption; power efficiency; rail-to-rail input and output ranges; rail-to-rail operation; size 180 nm; transconductance variation; unity gain frequency; voltage 1.8 V; CMOS integrated circuits; Compounds; Logic gates; Simulation; Rail-to-rail swing op amp; class AB output stage; complementary input pair; constant-gm; weak inversion;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
DOI :
10.1109/ICDCSyst.2012.6188670