• DocumentCode
    1908046
  • Title

    Design and Fabrication of Improved Resurfed LDMOS Devices

  • Author

    Hidalgo, S. ; Fernández, J. ; Berta, F. ; Godignon, P. ; Rebollo, J. ; Millán, J.

  • Author_Institution
    Centro Nacional de Microelectr?nica (CNM), CSIC-UAB. 08193 Bellaterra. Barcelona., Spain.
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    381
  • Lastpage
    384
  • Abstract
    The optimization of resurfed LDMOS transistors is considered in this paper. A new interdigitated LDMOS layout, characterized by a waved gate electrode, which theoretically predicts an improvement around 10% in the device specific ON-resistance, RONxS, iS presented. The experimental results from devices fabricated on epi-wafers with optimal properties, obtained from an analytical model for the device OFF-state, show the validity of the decrease of RONXS for this waved gate layout.
  • Keywords
    Analytical models; Avalanche breakdown; Breakdown voltage; Conductivity; Design engineering; Electrodes; Fabrication; Microelectronics; Semiconductor process modeling; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908046