Title :
Operation-oriented solution to boost key performance of RRAM
Author :
Chen, B. ; Gao, B. ; Sheng, S.W. ; Liu, L.F. ; Liu, X.Y. ; Chen, Y.S. ; Wang, Y. ; Kang, J.F. ; Yu, B.
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Abstract :
Based on the new finding on switching behavior, for the first time a new memory operation principle is proposed to control the switching and to achieve improved performance of oxide-based RRAM including device-to-device and cycle-to-cycle uniformity, RESET current, and window of RHRS/RLRS ratio. Furthermore, a numerical simulation method is developed to evaluate the validity of the new operation principle in scaled RRAM devices.
Keywords :
numerical analysis; phase change memories; switching circuits; RESET current; RHRS/RLRS ratio; boost key performance; cycle-to-cycle uniformity; device-to-device uniformity; memory operation principle; numerical simulation; operation-oriented solution; oxide-based RRAM; switching behavior; Electric fields; Fluctuations; Numerical models; Performance evaluation; Resistance; Scalability; Switches;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562578
