DocumentCode :
1908121
Title :
Multi-bit electromechanical memory cell for simple fabrication process
Author :
Lee, Kwangseok ; Choi, Woo Young
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
fYear :
2010
fDate :
13-14 June 2010
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, we propose a novel electromechanical memory cell (T cell). The T cell has been demonstrated successfully by the experimental results of its prototype cell. Also, the operation of a unit cell and that of array have been investigated. The T cell is superior to the previously reported H cell in terms of fabrication process complexity since the T cell needs only two metal layers.
Keywords :
circuit complexity; random-access storage; H cell; T cell; fabrication process complexity; metal layer; multibit electromechanical nonvolatile memory cell; unit cell; Arrays; Fabrication; Hysteresis; Metals; Nonvolatile memory; Prototypes; Structural beams;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
Type :
conf
DOI :
10.1109/SNW.2010.5562579
Filename :
5562579
Link To Document :
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