A new cell with hybrid single electron transistor and MOS transistor with feed back technique

Author

Mosavi, Seed Sajjad ; Shahhoseini, Ali ; Shamsi, Hossien

Author_Institution

Dept. of Electr. Eng., Islamic Azad Univ., Qazvin, Iran

fYear

2012

fDate

15-16 March 2012

Firstpage

63

Lastpage

66

Abstract

In this paper, a new cell Hybrid of single-electron transistor (SET) and MOS transistor called SET/FEED cell is proposed. In this new cell with connecting output to one of the single-electron transistors, the output voltage range is improved. Comparing SET/FEED cell, with SET/MOS cell, and NTT cell which the last two of them are carried out by Mahapatra and et al, based on this research the SET/FEED cell has a better INL and DNL in ADC circuits, and the output is very similar to square shape. All simulations were done at 65-nm technology and with 0.7V power supply using MIB model for the SET transistors by using H-SPICE simulator.

Keywords

MOSFET; SPICE; analogue-digital conversion; feedback; power supply circuits; semiconductor device models; single electron transistors; ADC circuits; DNL; H-SPICE simulator; INL; MIB model; MOS transistor; NTT cell; SET transistors; SET-FEED cell; SET-MOS cell; feed back technique; hybrid single electron transistor; output voltage range; power supply; size 65 nm; square shape; voltage 0.7 V; Capacitance; Feeds; Integrated circuit modeling; Logic gates; Radio access networks; Tunneling; Analog-digital conversion (ADC); SPICE; hybrid Metal-oxide-semiconductor (MOS); single-electron transistor (SET);

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICDCS), 2012 International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4577-1545-7

Type

conf

DOI

10.1109/ICDCSyst.2012.6188675

Filename

6188675