Title :
A new cell with hybrid single electron transistor and MOS transistor with feed back technique
Author :
Mosavi, Seed Sajjad ; Shahhoseini, Ali ; Shamsi, Hossien
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ., Qazvin, Iran
Abstract :
In this paper, a new cell Hybrid of single-electron transistor (SET) and MOS transistor called SET/FEED cell is proposed. In this new cell with connecting output to one of the single-electron transistors, the output voltage range is improved. Comparing SET/FEED cell, with SET/MOS cell, and NTT cell which the last two of them are carried out by Mahapatra and et al, based on this research the SET/FEED cell has a better INL and DNL in ADC circuits, and the output is very similar to square shape. All simulations were done at 65-nm technology and with 0.7V power supply using MIB model for the SET transistors by using H-SPICE simulator.
Keywords :
MOSFET; SPICE; analogue-digital conversion; feedback; power supply circuits; semiconductor device models; single electron transistors; ADC circuits; DNL; H-SPICE simulator; INL; MIB model; MOS transistor; NTT cell; SET transistors; SET-FEED cell; SET-MOS cell; feed back technique; hybrid single electron transistor; output voltage range; power supply; size 65 nm; square shape; voltage 0.7 V; Capacitance; Feeds; Integrated circuit modeling; Logic gates; Radio access networks; Tunneling; Analog-digital conversion (ADC); SPICE; hybrid Metal-oxide-semiconductor (MOS); single-electron transistor (SET);
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
DOI :
10.1109/ICDCSyst.2012.6188675
