DocumentCode
1908208
Title
Frequency Dependent Small-Signal Drain Characteristics in Sllicon-on-Sapphire MOSFETs
Author
Howes, R. ; Redman-White, W.
Author_Institution
Department of Electronics and Computer Science, The University, Southampton, United Kingdom
fYear
1991
fDate
16-19 Sept. 1991
Firstpage
353
Lastpage
356
Abstract
Measurements of the frequency dependence of drain admittance in SOS MOSFETs are presented. The characteristics are a strong function of device geometry as well as bias conditions. More than an order of magnitude variation of admittance with frequency has been observed.
Keywords
Admittance measurement; Circuit simulation; Circuit testing; Frequency dependence; Frequency measurement; Impact ionization; Impedance; MOSFETs; Semiconductor device measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location
Montreux, Switzerland
Print_ISBN
0444890661
Type
conf
Filename
5435312
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