Title :
Frequency Dependent Small-Signal Drain Characteristics in Sllicon-on-Sapphire MOSFETs
Author :
Howes, R. ; Redman-White, W.
Author_Institution :
Department of Electronics and Computer Science, The University, Southampton, United Kingdom
Abstract :
Measurements of the frequency dependence of drain admittance in SOS MOSFETs are presented. The characteristics are a strong function of device geometry as well as bias conditions. More than an order of magnitude variation of admittance with frequency has been observed.
Keywords :
Admittance measurement; Circuit simulation; Circuit testing; Frequency dependence; Frequency measurement; Impact ionization; Impedance; MOSFETs; Semiconductor device measurement; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
