Title :
The effect of hole leakage and Auger recombination on the temperature sensitivity of GaInAsSb/GaSb mid-infrared lasers
Author :
Ikyo, Barnabas A. ; Marko, I.P. ; Hild, K. ; Adams, A.R. ; Arafin, Shamsul ; Amann, M.-C. ; Sweeney, S.J.
Author_Institution :
Dept. of Phys., Univ. of Surrey, Guildford, UK
Abstract :
In this work, temperature and hydrostatic pressure have been used independently to tune the bandgap of GaInAsSb type-I edge emitting lasers. The dependence of Jth, Auger current (JAuger) and radiative current (Jrad) on the band gap of these devices is presented.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; infrared sources; leakage currents; semiconductor lasers; thermo-optical devices; Auger current; Auger recombination; GaInAsSb-GaSb; band gap; hole leakage effect; hydrostatic pressure; midinfrared lasers; radiative current; temperature sensitivity; type-I edge emitting lasers; Gas lasers; Laser theory; Photonic band gap; Sensitivity; Temperature distribution; Temperature sensors;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
DOI :
10.1109/CLEOE-IQEC.2013.6800690
