Title :
A Lateral Bipolar Transistor Concept on SOI using a Self-Aligned Base Definition Technique
Author :
Magnusson, U. ; Edholm, B. ; Masszi, F.
Author_Institution :
Uppsala University, Dept. of Technology, P.O. Box 534, S-751 21 Uppsala, Sweden
Abstract :
A lateral bipolar transistor technology for the fabrication of high performance lateral devices on SOI is presented. The presented technology makes use of selective etching procedures and time controlled wet etching to define the basewidth of the devices. 2-D process simulation results are presented together with 2-D device simulations showing the applicability of the proposed process.
Keywords :
BiCMOS integrated circuits; Bipolar transistors; Cutoff frequency; Fabrication; Materials science and technology; Microelectronics; Semiconductor films; Substrates; Thickness control; Wet etching;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
