Title :
Metamorphics: extending the limits of GaAs
Author :
Salmer, Georges ; Cordier, Yvon
Author_Institution :
IEMN, France
fDate :
22-24 September 1997
Keywords :
Capacitive sensors; Degradation; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Lattices; MODFETs; Photonic band gap; Substrates;
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194381
