Effect of in situ Cs treatment on the field emission characteristics of amorphous diamond films

Author

Xie, W.G. ; Chen, J. ; Deng, S.Z. ; Xu, N.S.

Author_Institution

State Key Lab. of Optoelectron. Mater. & Technol., Zhongshan Univ., Guangzhou, China

fYear

2003

fDate

7-11 July 2003

Firstpage

113

Abstract

Summary form only given. In this study, we will report the effect of in situ Cs treatment on field emission characteristics of amorphous diamond (a-D) films. The a-D film was prepared using filtered cathodic vacuum arc (FCVA) system on Cu substrate with thickness from 10 nm to 40 nm. In situ Cs deposition on a-D film was achieved by evaporation of a Cs source incorporated into UHV field emission testing system. The FE characteristics including I-E curve, spatial distribution of emission sites will be studied using transparent anode technique before and after the Cs treatment. The change of turn-on field, emission site distribution and work function will be studied. The results will be analyzed using F-N theory. Physical mechanism accounting for the observed results will be discussed.

Keywords

amorphous state; anodes; caesium; diamond; field emission; thin films; work function; 10 to 40 nm; C; Cs; Cs source; Cs treatment; Cu; Cu substrate; UHV field emission testing; amorphous diamond films; evaporation; field emission characteristics; filtered cathodic vacuum arc system; transparent anode technique; ultra high voltage field emission; work function; Amorphous materials; Flat panel displays; Substrates; System testing; Vacuum arcs; Vacuum systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International

Conference_Location

Osaka, Japan

Print_ISBN

4-8181-9515-4

Type

conf

DOI

10.1109/IVMC.2003.1223009

Filename

1223009