• DocumentCode
    1908388
  • Title

    Novel fabrication technique of sub-10-nm-diameter Si nanowire FET using active oxidation

  • Author

    Morita, Yukinori ; Migita, Shinji ; Mizubayashi, Wataru ; Ota, Hiroyuki

  • Author_Institution
    Nanodevice Innovation Res. Center (NIRC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
  • fYear
    2010
  • fDate
    13-14 June 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We propose a novel technique for top-down fabrication of Si nanowire (SiNW) field effect transistors (FETs) using active oxidation of the Si channel. The width and line edge roughness of the SiNW channel were simultaneously reduced by active oxidation to 2.8 nm and 1.97 nm (3-σ), respectively. Device performance of ultra-thin SiNW FETs with atomically controlled nanowire-size and nanowire-shape is demonstrated.
  • Keywords
    elemental semiconductors; field effect transistors; nanowires; silicon; Si; active oxidation; atomically controlled nanowire-size; field effect transistors; line edge roughness; nanowire-shape; size 1.97 nm; size 10 nm; size 2.8 nm; top-down fabrication technique; ultra-thin nanowire FET; Annealing; FETs; Fabrication; Logic gates; Oxidation; Silicon; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2010
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-7727-2
  • Electronic_ISBN
    978-1-4244-7726-5
  • Type

    conf

  • DOI
    10.1109/SNW.2010.5562588
  • Filename
    5562588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908388