Title :
Design and Characteristics of a GaAs BMFET
Author :
Schweeger, G. ; Corte, F.G.Della ; Hartnagel, H.L.
Author_Institution :
Institut fÿr Hochfrequenztechnik, TH Darmstadt, 6100 Darmstadt, Germany
Abstract :
The first realisation of a vertical JFET on GaAs with a low-doped channel operating in the bipolar mode (GaAs BMFET) is presented. The DC characteristics are presented and possible technological improvements are discussed. Measurements at temperatures between room temperature and 300°C demonstrate very low temperature dependence, so that the device is ideally suited for the application at high temperatures. Further applications are proposed.
Keywords :
Charge carrier processes; Doping; Etching; Gallium arsenide; Plasma temperature; Silicon; Temperature control; Temperature dependence; Temperature measurement; Transistors;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
