• DocumentCode
    1908390
  • Title

    Design and Characteristics of a GaAs BMFET

  • Author

    Schweeger, G. ; Corte, F.G.Della ; Hartnagel, H.L.

  • Author_Institution
    Institut fÿr Hochfrequenztechnik, TH Darmstadt, 6100 Darmstadt, Germany
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    313
  • Lastpage
    316
  • Abstract
    The first realisation of a vertical JFET on GaAs with a low-doped channel operating in the bipolar mode (GaAs BMFET) is presented. The DC characteristics are presented and possible technological improvements are discussed. Measurements at temperatures between room temperature and 300°C demonstrate very low temperature dependence, so that the device is ideally suited for the application at high temperatures. Further applications are proposed.
  • Keywords
    Charge carrier processes; Doping; Etching; Gallium arsenide; Plasma temperature; Silicon; Temperature control; Temperature dependence; Temperature measurement; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435320
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908390