Title :
Generation of ultra-high repetition rate optical pulses through external injection in passively mode-locked monolithical semiconductor lasers
Author :
Pusino, Vincenzo ; Sorel, Marc ; Strain, Michael J.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
Summary form only given. A wide number of applications, such as THz signal generation, ultrafast optical clocking and next generation optical communication systems require high repetition rate optical pulses. Passively mode-locked semiconductor lasers using saturable absorbers (SAs) in a Fabry-Pérot configuration are excellent candidates, providing high-quality pulse trains in a very compact device [1]. The technical difficulties of cleaving edge-emitting lasers shorter than a few hundreds of microns limit their fundamental cavity repetition rate to tens of GHz. Colliding Pulse Mode-Locking (CPM, [2]) or Compound Cavity Mode-Locking (CCM, [3]) have been proposed as a way to increase the repetition rate of passively mode-locked semiconductor lasers: both rely on lithographically defined sub-cavities, therefore despite high achievable repetition rates their tunability is limited.Here we show that injection of two continuous wave (CW) optical signals into a mode-locked Fabry-Pérot cavity can generate ultra-high repetition rate mode-locking at integer multiples of the fundamental repetition rate. The repetition rate can then be efficiently tuned by varying the wavelength spacing between the two injected signals. Devices fabricated on an indium phosphide multi-quantum well material platform were used for the experiments [4], since their mode-locking dynamics at the fundamental frequency of 36 GHz is well understood [5]. The experimental setup is shown in Fig. 1. Two CW tunable lasers, their output power and polarisation controlled, are combined then injected into one side of the device; a fiber lens on the opposite side collects the laser output, which is then coupled to an autocorrelator, an RF and an Optical Spectrum Analyser.The locking mechanism appears to be a combination of two effects: the heterodyne beating of the two injected signals, modulating the losses of the SA, and the nonlinear interaction via Four Wave Mixing (FWM) between the lasing m- des. Lasing of the modes corresponding to a multiple of the injected lines spacing is favoured, and other modes are suppressed. Mode-locking at repetition rates up to 26 times (~910GHz) the fundamental one was observed. An example of the autocorrelation trace and the optical spectrum at 560GHz is shown in Fig. 2.
Keywords :
Fabry-Perot resonators; III-V semiconductors; indium compounds; laser cavity resonators; laser mode locking; laser modes; laser tuning; lenses; multiwave mixing; optical correlation; optical pulse generation; optical saturable absorption; quantum well lasers; CCM; CPM; CW tunable lasers; FWM; Fabry-Perot configuration; Four Wave Mixing; InP; Optical Spectrum Analyser; RF; SA; THz signal generation; autocorrelation trace; autocorrelator; cleaving edge-emitting lasers; colliding pulse mode-locking; compact device; compound cavity mode-locking; continuous wave optical signal injection; external injection; fiber lens; frequency 36 GHz; fundamental cavity repetition rate; fundamental frequency; heterodyne beating; high-quality pulse trains; indium phosphide multiquantum well material platform; injected line spacing; laser output; lasing modes; loss modulation; mode-locked Fabry-Perot cavity; mode-locking dynamics; next generation optical communication systems; nonlinear interaction; output power; passively mode-locked monolithical semiconductor lasers; polarisation; saturable absorbers; sub-cavities; tunability; ultra-high repetition rate mode-locking; ultra-high repetition rate optical pulse generation; ultrafast optical clocking; wavelength spacing; Laser mode locking; Optical device fabrication; Optical fibers; Optical polarization; Optical pulses; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
DOI :
10.1109/CLEOE-IQEC.2013.6800698