Title :
Monte Carlo analysis of In0.53Ga0.47as Implant-Free Quantum-Well device performance
Author :
Benbakhti, B. ; Towie, E. ; Kalna, K. ; Hellings, G. ; Eneman, G. ; De Meyer, K. ; Meuris, M. ; Asenov, A.
Author_Institution :
Dept. Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
This work reports a Monte Carlo (MC) and Drift Diffusion (DD) investigation of the IF-QW device performance. The optimisation of the output characteristics is based on the careful choice of layer thicknesses and doping concentrations. Particular attention has been paid on the improvement of the subthreshold characteristics and drive current by careful design of the overgrown regions, δ-doping on the backside of the channel and optimisation of the lateral spacer.
Keywords :
Monte Carlo methods; gallium compounds; indium compounds; semiconductor doping; semiconductor quantum wells; δ-doping; IF-QW device; In0.53Ga0.47As; Monte Carlo analysis; doping concentration; drift diffusion; implant-free quantum-well device; layer thickness; Aluminum oxide; Doping; Logic gates; Performance evaluation; Scattering; Semiconductor process modeling; Strontium;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562589
