• DocumentCode
    1908407
  • Title

    Monte Carlo analysis of In0.53Ga0.47as Implant-Free Quantum-Well device performance

  • Author

    Benbakhti, B. ; Towie, E. ; Kalna, K. ; Hellings, G. ; Eneman, G. ; De Meyer, K. ; Meuris, M. ; Asenov, A.

  • Author_Institution
    Dept. Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK
  • fYear
    2010
  • fDate
    13-14 June 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work reports a Monte Carlo (MC) and Drift Diffusion (DD) investigation of the IF-QW device performance. The optimisation of the output characteristics is based on the careful choice of layer thicknesses and doping concentrations. Particular attention has been paid on the improvement of the subthreshold characteristics and drive current by careful design of the overgrown regions, δ-doping on the backside of the channel and optimisation of the lateral spacer.
  • Keywords
    Monte Carlo methods; gallium compounds; indium compounds; semiconductor doping; semiconductor quantum wells; δ-doping; IF-QW device; In0.53Ga0.47As; Monte Carlo analysis; doping concentration; drift diffusion; implant-free quantum-well device; layer thickness; Aluminum oxide; Doping; Logic gates; Performance evaluation; Scattering; Semiconductor process modeling; Strontium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2010
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-7727-2
  • Electronic_ISBN
    978-1-4244-7726-5
  • Type

    conf

  • DOI
    10.1109/SNW.2010.5562589
  • Filename
    5562589
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908407