Title :
Fabrication Procedures of Photovoltaic Lead-Chalcogenide-on-Silicon Infrared Sensor Arrays for Thermal Imaging
Author :
Hoshino, T. ; Zogg, H. ; Maissen, C. ; Masek, J. ; Blunier, S.
Author_Institution :
AFIF (Arbeitsgemeinschaft fÿr Industrielle Forschung) at Swiss Federal Institute of Technology, ETH Hönggerberg, CH-8093 Zÿrich, Switzerland, fax + 41 1 371 2419; Nippon Steel Corporation, Personal Division Ohtemachi 2-6-3 Chiyoda-ku, Tokyo, J
Abstract :
Epitaxial Pb1-xSnx, Se layers have been grown onto Si(111) substrates with the aid of an intermediate CaF2/BaF2 buffer layer by MBE. Photovoltaic infrared sensor arrays with up to 256 elements for thermal imaging applications have been fabricated in the narrow gap lead chalcogenide layers. The whole growth and fabrication procedure was done at temperatures never exceeding 450°C on Si substrates containing prefabricated integrated circuits with standarde Al-metallization for the first time.
Keywords :
Buffer layers; Fabrication; Infrared sensors; Lead; Optical imaging; Photovoltaic systems; Sensor arrays; Solar power generation; Substrates; Tin;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
