DocumentCode
1908473
Title
Electrons resonant tunnelling between a metal tip and ultrathin silicon oxide on Si(111)
Author
Xue, K. ; Xu, J.B. ; An, J. ; Chen, J.
Author_Institution
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
fYear
2003
fDate
7-11 July 2003
Firstpage
119
Lastpage
120
Abstract
In this paper, we have studied the resonant tunnelling phenomena between a tungsten tip and ultrathin SiO/sub 2/ films on silicon substrate, including native SiO/sub 2/ films and ultrathin UHV thermal in-situ oxidized SiO/sub 2/ films on Si(111). Though it is believed that the ERT behavior depends greatly on those factors which could lead to the electron scattering, we found that dramatic ERT behavior could also be observed.
Keywords
dielectric thin films; resonant tunnelling; scanning tunnelling microscopy; silicon compounds; tungsten; Si; SiO/sub 2/; UHV; W; electron scattering; electrons resonant tunnelling; silicon substrate; tungsten tip; ultrathin SiO/sub 2/ films; ultrathin silicon oxide; Conductive films; Electrons; Insulation; Materials science and technology; Resonance; Resonant tunneling devices; Semiconductor films; Silicon; Tungsten; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location
Osaka, Japan
Print_ISBN
4-8181-9515-4
Type
conf
DOI
10.1109/IVMC.2003.1223012
Filename
1223012
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