Title :
Electrons resonant tunnelling between a metal tip and ultrathin silicon oxide on Si(111)
Author :
Xue, K. ; Xu, J.B. ; An, J. ; Chen, J.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
Abstract :
In this paper, we have studied the resonant tunnelling phenomena between a tungsten tip and ultrathin SiO/sub 2/ films on silicon substrate, including native SiO/sub 2/ films and ultrathin UHV thermal in-situ oxidized SiO/sub 2/ films on Si(111). Though it is believed that the ERT behavior depends greatly on those factors which could lead to the electron scattering, we found that dramatic ERT behavior could also be observed.
Keywords :
dielectric thin films; resonant tunnelling; scanning tunnelling microscopy; silicon compounds; tungsten; Si; SiO/sub 2/; UHV; W; electron scattering; electrons resonant tunnelling; silicon substrate; tungsten tip; ultrathin SiO/sub 2/ films; ultrathin silicon oxide; Conductive films; Electrons; Insulation; Materials science and technology; Resonance; Resonant tunneling devices; Semiconductor films; Silicon; Tungsten; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 2003. Technical Digest of the 16th International
Conference_Location :
Osaka, Japan
Print_ISBN :
4-8181-9515-4
DOI :
10.1109/IVMC.2003.1223012
