DocumentCode :
1908480
Title :
A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits
Author :
Hilleringmann, U. ; Knospe, K. ; Heite, C. ; Schumacher, K. ; Goser, K.
Author_Institution :
University of Dortmund, Department of Electrical Engineering, Emil-Figge-Str. 68, D-4600 Dortmund 50
fYear :
1991
fDate :
16-19 Sept. 1991
Firstpage :
289
Lastpage :
292
Abstract :
A submicron n-well SWAMI-LOCOS CMOS process on silicon substrate has been used for monolithic integration of an electrooptical systemn consisting of waveguides, photodetectors and VLSI CMOS circuits. The optical films have been deposited as SiON films on SiO2 buffer layers by LPCVD or PECVD technique, waveguides were delineated by plasma etching of the SiON film.
Keywords :
CMOS process; CMOS technology; Electrooptical waveguides; Monolithic integrated circuits; Optical films; Optical waveguides; Photodetectors; Silicon; Substrates; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
Print_ISBN :
0444890661
Type :
conf
Filename :
5435324
Link To Document :
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