• DocumentCode
    1908480
  • Title

    A Silicon Based Technology for Monolithic Integration of Waveguides and VLSI CMOS Circuits

  • Author

    Hilleringmann, U. ; Knospe, K. ; Heite, C. ; Schumacher, K. ; Goser, K.

  • Author_Institution
    University of Dortmund, Department of Electrical Engineering, Emil-Figge-Str. 68, D-4600 Dortmund 50
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    289
  • Lastpage
    292
  • Abstract
    A submicron n-well SWAMI-LOCOS CMOS process on silicon substrate has been used for monolithic integration of an electrooptical systemn consisting of waveguides, photodetectors and VLSI CMOS circuits. The optical films have been deposited as SiON films on SiO2 buffer layers by LPCVD or PECVD technique, waveguides were delineated by plasma etching of the SiON film.
  • Keywords
    CMOS process; CMOS technology; Electrooptical waveguides; Monolithic integrated circuits; Optical films; Optical waveguides; Photodetectors; Silicon; Substrates; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435324
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908480