Title :
10 Gbit/s Monolithic Integrated Optoelectronic Receiver using an MSM Photodiode and AlGaAs/GaAs HEMTs
Author :
Hurm, V. ; Rosenzweig, J. ; Ludwig, M. ; Axmann, A. ; Benz, W. ; Berroth, M. ; Osorio, R. ; Hülsmann, A. ; Kaufel, G. ; Köhler, K. ; Raynor, B. ; Schneider, Jo.
Author_Institution :
Fraunhofer-Institut f?r Angewandte Festk?rperphysik, Tullastr. 72, D-7800 Freiburg, Germany
Abstract :
A 10 Gbit/s monolithic integrated optoelectronic receiver has been fabricated with a metal-semiconductor-metal (MSM) photodiode and enhancement/depletion 0.5 ¿m recessed-gate AlGaAs/GaAs HEMTs. A -3dB bandwidth of 11.3 GHz has been achieved.
Keywords :
Bandwidth; Circuits; Gallium arsenide; HEMTs; Integrated optoelectronics; MODFETs; Photodiodes; Resistors; Substrates; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
