DocumentCode

1908550

Title

GaN based devices for electronic applications

Author

Khan, M.A. ; Shur, M.S.

Author_Institution

APA Optics, APA inc., USA

fYear

1997

fDate

22-24 September 1997

Firstpage

170

Lastpage

175

Keywords

Aluminum gallium nitride; Electrons; Epitaxial growth; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; Silicon; Substrates; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Print_ISBN

2-86332-221-4

Type

conf

DOI

10.1109/ESSDERC.1997.194393

Filename

1503323