• DocumentCode
    1908563
  • Title

    AlInAs/GaInAs Metal-Semiconductor-Metal photodiodes with very low dark current

  • Author

    Temmar, A ; Praseuth, J.P. ; Palmier, J.F. ; Scavennec, A.

  • Author_Institution
    Centre National d´´Etudes des Télécommunications, Laboratoire de Bagneux, 196 Avenue Henri Ravera, 92220 BAGNEUX, FRANCE
  • fYear
    1991
  • fDate
    16-19 Sept. 1991
  • Firstpage
    267
  • Lastpage
    270
  • Abstract
    AlInAs/GaInAs Metal-Semiconductor-Metal photodiodes have been fabricated by MBE. The structure incorporates an AlGaInAs graded region to avoid photocarrier trapping and to provide surface passivation. Low dark current and capacitance as well as good responsivity and large bandwidth have been obtained. These combined properties confirm the potential of AlInAs/GaInAs MSM detectors for long-wavelength (1.3-1.55¿m) low-noise integrated photoreceiver applications.
  • Keywords
    Capacitance; Dark current; Detectors; Electrodes; Leakage current; Passivation; Photodetectors; Photodiodes; Schottky barriers; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
  • Conference_Location
    Montreux, Switzerland
  • Print_ISBN
    0444890661
  • Type

    conf

  • Filename
    5435327
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908563