Title :
Electron-phonon scattering in planar MOSFETs with NEGF
Author :
Pal, Himadri S. ; Nikonov, Dmitri E. ; Kim, Raseong ; Lundstrom, Mark S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
An approach to include elastic and inelastic electron-phonon scattering into the nonequilibrium Green´s function (NEGF) framework that is computationally manageable and applicable to planar MOSFETs has been developed. By reformulating the NEGF equations in terms of integrated transverse momentum modes, the computational burden has been significantly reduced. This allows treatment of both quantum mechanics and dissipative electron-phonon scattering processes for device sizes from nanometers to microns. The formalism is rigorously benchmarked against semiclassical Monte Carlo transport.
Keywords :
Green´s function methods; MOSFET; Monte Carlo methods; electron-phonon interactions; quantum theory; Monte Carlo transport; NEGF equation; NEGF framework; dissipative electron-phonon scattering process; inelastic electron-phonon scattering; integrated transverse momentum mode; nonequilibrium Green´s function; planar MOSFET; quantum mechanics; Benchmark testing; Computational modeling; Electric potential; MOSFETs; Phonons; Scattering; Silicon; CMOS; NEGF; phonon; scattering;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562595
