Title :
Origin of “current-onset voltage” variability in scaled MOSFETs
Author :
Kumar, A. ; Mizutani, T. ; Shimizu, K. ; Tsunomura, T. ; Nishida, A. ; Takeuchi, K. ; Inaba, S. ; Kamohara, S. ; Terada, K. ; Hiramoto, T.
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
Present work analyzes the cause of “current-onset voltage” variability, which has been newly found to largely affect drain current variability. It is found by 3D device simulation that the “current-onset voltage” variability is determined by how largely the channel potential fluctuates by random dopant disposition. Reducing RDF will suppress both threshold voltage and current-onset voltage variability as well.
Keywords :
MOSFET; semiconductor device models; 3D device simulation; RDF; current-onset voltage variability; drain current variability; random dopant disposition; scaled MOSFET; threshold voltage; Correlation; Electric potential; Resource description framework; Solid modeling; Subthreshold current; Three dimensional displays;
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2010
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-7727-2
Electronic_ISBN :
978-1-4244-7726-5
DOI :
10.1109/SNW.2010.5562596
