• DocumentCode
    1908626
  • Title

    Influence of interface traps on high-mobility channel performance

  • Author

    Hellings, Geert ; Eneman, Geert ; Brammertz, Guy ; Martens, Koen ; Mitard, Jerôme ; Wang, Wei-E ; Hoffmann, Thomas ; Meuris, Marc ; De Meyer, Kristin

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2010
  • fDate
    13-14 June 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A technique is presented and verified to predict the electrostatic degradation of MOSFET performance, due to interface traps and their energy distribution. It provides an estimate of the technology´s sub-threshold slope degradation based on an extracted interface traps spectrum, without the need for transistor fabrication.
  • Keywords
    MOSFET; electrostatics; interface states; MOSFET performance; electrostatic degradation; energy distribution; high-mobility channel performance; interface trap spectrum; sub-threshold slope degradation; Degradation; Electrostatics; Indium gallium arsenide; Logic gates; MOS devices; Passivation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2010
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-7727-2
  • Electronic_ISBN
    978-1-4244-7726-5
  • Type

    conf

  • DOI
    10.1109/SNW.2010.5562597
  • Filename
    5562597
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908626