Title :
SESAM mode-locked red AlGaInP semiconductor disk laser emitting at 665 nm
Author :
Schwarzback, T. ; Bek, R. ; Kahle, H. ; Jetter, M. ; Michler, P.
Author_Institution :
Inst. fur Halbleiteroptik und Funktionelle Grenzflachen, Univ. of Stuttgart, Stuttgart, Germany
Abstract :
We present a red emitting passively mode-locked semiconductor laser system using a AlGaInP-SESAM. All samples are produced by metal-organic vapor-phase epitaxy including a Bragg mirror on a GaAs substrate.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; laser mirrors; laser mode locking; optical fabrication; optical saturable absorption; semiconductor lasers; vapour phase epitaxial growth; wide band gap semiconductors; AlGaInP; AlGaInP-SESAM; Bragg mirror; GaAs; GaAs substrate; metal-organic vapor-phase epitaxy; red emitting passively mode-locked semiconductor disk laser system; semiconductor saturable absorber mirror; wavelength 665 nm; Laser beams; Laser mode locking; Mirrors; Pump lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
DOI :
10.1109/CLEOE-IQEC.2013.6800706
