DocumentCode
1908639
Title
Tape bump forming and bonding in BTAB
Author
Kuang, Yan-Xiang ; Liu, Ling
Author_Institution
East China Microelectron. Inst., Anhui, China
fYear
1990
fDate
20-23 May 1990
Firstpage
943
Abstract
A tape bump structure has been developed in bump tape automated bonding (BTAB). Au bumps were formed on single leads of Cu foil by photolithography, etch, and electroplating. Then the bumps on the leads were directly interconnected with the aluminum pads in the IC chips. This tape-bump-forming technology is characterized by simplicity and low cost. The bonding pull force between tape bumps and aluminum pads of the IC chips ranges from 14 to 65 gf. The average pull force is 34 gf
Keywords
integrated circuit manufacture; surface mount technology; tape automated bonding; BTAB; Cu-Au-Al; IC chips; bonding pull force; bump tape automated bonding; electroplating; etch; inner lead bonding; low cost; outer lead bonding; photolithography; tape bump structure; tape-bump-forming technology; Aluminum; Bonding forces; Chemicals; Closed loop systems; Costs; Etching; Gold; Silicon; Substrates; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 1990. ., 40th
Conference_Location
Las Vegas, NV
Type
conf
DOI
10.1109/ECTC.1990.122302
Filename
122302
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