Title :
A 27/GHz/151 mW GaAs 256/258 dual-modulus prescaler IC with 0.1 /spl mu/m double-deck-shaped (DDS) gate E/D-HJFETs
Author :
Wada, S. ; Maeda, T. ; Tokushima, M. ; Yamazaki, J. ; Ishikawa, M. ; Fujii, M.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
We have developed 0.1-/spl mu/m double-deck-shaped (DDS) gate enhancement-mode (E) and depletion-mode (D) heterojunction (HJ) FET technology based upon an all-dry-etching process, which enables high current-gain cut-off frequencies (f/sub T/) in both E- and D-mode FETs above 100 GHz. We also report the first 256/258 dual-modulus prescaler IC operating above 20 GHz with low power consumption. Obtained maximum input frequency for the prescaler was 27 GHz with power consumption of 151 mW at a supply voltage of 1.2 V. This power consumption is about 1/50 of the value extrapolated from ones reported for prescalers.
Keywords :
III-V semiconductors; JFET integrated circuits; field effect digital integrated circuits; gallium arsenide; high-speed integrated circuits; integrated circuit technology; low-power electronics; prescalers; sputter etching; 0.1 micron; 1.2 V; 151 mW; 27 GHz; D-mode FETs; E-mode FETs; E/D HJFETs; GaAs; depletion-mode; double-deck-shaped gate; dry-etching process; dual-modulus prescaler IC; enhancement-mode; heterojunction FET technology; high current-gain cutoff frequencies; low power consumption; Electronic mail; Epitaxial layers; Etching; Fabrication; Gallium arsenide; Inverters; Molecular beam epitaxial growth; Plasma applications; Sputtering; Substrates;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722645
