DocumentCode
1908687
Title
A Physically Based Substrate Current Simulation
Author
Knaipp, M. ; Grasser, T. ; Selberherr, S.
Author_Institution
Institute for Microelectronics, TU Vienna
fYear
1997
fDate
22-24 September 1997
Firstpage
196
Lastpage
199
Keywords
Computational modeling; Current density; High definition video; Impact ionization; MOSFET circuits; Semiconductor device doping; Semiconductor process modeling; Substrates; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN
2-86332-221-4
Type
conf
DOI
10.1109/ESSDERC.1997.194399
Filename
1503329
Link To Document