DocumentCode :
1908687
Title :
A Physically Based Substrate Current Simulation
Author :
Knaipp, M. ; Grasser, T. ; Selberherr, S.
Author_Institution :
Institute for Microelectronics, TU Vienna
fYear :
1997
fDate :
22-24 September 1997
Firstpage :
196
Lastpage :
199
Keywords :
Computational modeling; Current density; High definition video; Impact ionization; MOSFET circuits; Semiconductor device doping; Semiconductor process modeling; Substrates; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194399
Filename :
1503329
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1908687
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