Title :
Low cost, plastic encapsulated mixers for C/X-band applications
Author :
Trantanella, C. ; Shifrin, M. ; Bedard, B.
Author_Institution :
Hittite Microwave Corp., Woburn, MA, USA
Abstract :
Two new plastic encapsulated passive mixers operating in the C- and X-bands are presented in this paper. One mixer is a narrowband design, covering the 4.5 to 6 GHz range, while the other mixer is broadband, covering 4.5 to 9 GHz. The narrowband/broadband mixers feature a conversion loss of 6/8 dB, an LO to RF isolation of 30/20 dB, and an IF frequency response out to 1.6/2.5 GHz. These designs are the first reported realizations of plastic encapsulated, passive mixers operating in the C/X-bands.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC mixers; encapsulation; field effect MMIC; frequency response; gallium arsenide; passive networks; 4.5 to 6 GHz; 4.5 to 9 GHz; 6 dB; 8 dB; C-band; GaAs; IF frequency response; LO to RF isolation; X-band; broadband design; conversion loss; narrowband design; passive mixers; plastic encapsulated mixers; Circuit topology; Costs; Dielectrics; MMICs; Mixers; Narrowband; Plastics; Radio frequency; Schottky diodes; Semiconductor process modeling;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722647
