Title :
Monolithic 14 GHz wideband InP HBT BPSK modulator
Author :
Desrosiers, R. ; Cowles, J. ; Hornbuckle, C. ; Gutierrez-Aitken, A. ; Becker, J.
Author_Institution :
TRW Electron. & Technol. Div., Redondo Beach, CA, USA
Abstract :
This paper presents the first reported monolithic InP HBT BPSK modulator capable of >3 Gsps data rates on a 14 GHz carrier. The MMIC, consisting of a digital modulation driver and a diode mixer, was fabricated using TRW´s 75 GHz f/sub t/ InP HBT MMIC process. The use of InP based devices for the mixer and driver circuits results in a 2/spl times/ decrease in power consumption compared with equivalent GaAs HBT circuits. The successful integration of traditional microwave and digital circuits demonstrates the versatility of InP HBTs as a high frequency, low power mixed-mode technology.
Keywords :
III-V semiconductors; bipolar MMIC; heterojunction bipolar transistors; indium compounds; low-power electronics; mixed analogue-digital integrated circuits; modulators; phase shift keying; 14 GHz; HBT BPSK modulator; InP; MMIC; TRW; data rates; digital modulation driver; diode mixer; driver circuits; low power mixed-mode technology; power consumption; Binary phase shift keying; Digital modulation; Diodes; Driver circuits; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; MMICs; Wideband;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual
Conference_Location :
Atlanta, GA, USA
Print_ISBN :
0-7803-5049-9
DOI :
10.1109/GAAS.1998.722648
