Title :
An analytical model for GAA transistors
Author :
Terao, A. ; van de Wiele, F.
Author_Institution :
Université Catholique de Louvain, Laboratoire de Microélectronique, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium; Senior Research Assistant of the National Fund for Scientific Research, Belgium
Abstract :
The GAA transistor is a new SOI device with a symmetrical double-gate structure. We have developped an analytical model to describe the volume inversion occuring in this device. The model is used to characterize the mobility of the carriers both at the surface and in the volume of the SOI film.
Keywords :
Analytical models; Conductive films; Impurities; Lead compounds; Microelectronics; Poisson equations; Semiconductor films; Silicon on insulator technology; Transconductance; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Conference_Location :
Montreux, Switzerland
