1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials

Distinct electron and hole quasi-Fermi potentials, ¿fn, and ¿fp, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of ¿fn, ¿fp, in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of ¿fp(t) depends on the device history and generation/recombination rates.