Title :
Design and simulation of AlGaN/GaN HFET
Author :
Nirmal, D. ; Varughese, Shevin Bobin ; Joy, Doreen ; Princess, Flavia ; Kumar, P. Vijaya
Author_Institution :
Dept. of ECE, Karunya Univ., Coimbatore, India
Abstract :
GaN material has a very good potential in today´s semiconductor world because of its highlighted characters like wide band gap and high saturation velocity. The combined effect of piezoelectric polarization and spontaneous polarization provides a high electron concentration called 2DEG in Al0.3Ga0.7N/GaN interface which allows higher mobility of carriers in interface than in bulk GaN material. 2-D simulation of power Al0.3Ga0.7N/GaNHFET device is carried out here and the effect of different parameters are analysed and studied using Sentaurus TCAD software. Prameters like IdVg, IdVd, gmetc are obtained. Several analysis are done with source to gate length, passivation layer etc.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; two-dimensional electron gas; wide band gap semiconductors; 2DEG; AlGaN-GaN; GaN material; HFET; Sentaurus TCAD software; high electron concentration; high saturation velocity; piezoelectric polarization; spontaneous polarization; wide band gap; Gallium nitride; Logic gates; Performance evaluation; Photonic band gap; Piezoelectric polarization; HFET; Heterostucture; Lsg; Schottky barrier height; TCAD;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
DOI :
10.1109/ICDCSyst.2012.6188704
