Title :
Extended 0.13 /spl mu/m CMOS technology for the ultra high-speed and MS/RF application segments
Author :
Chang, C.S. ; Chao, C.P. ; Leung, Y.K. ; Lin, C.H. ; Hsu, H.-M. ; Wang, Y.P. ; Chang, S.Y. ; Chiu, T.H. ; Shyu, J.S. ; Wu, C.C. ; Wang, C.H. ; Chang, R.Y. ; Chen, C.W. ; Huang, C.F. ; Chen, C.H. ; Chen, S.H. ; Yeh, T.H. ; Cheng, J.Y. ; Liaw, J.J. ; Chu, Y
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
This paper introduces new technology features to support ultra high-speed and MS/RF applications incorporated into a leading-edge fully manufacturable 0.13 /spl mu/m CMOS foundry technology (K.K. Young et al, IEDM Tech Digest, pp. 563-566, 2000). New core devices with 15.5 /spl Aring/ and nominal 75 nm physical gate lengths support at least 10% performance improvement with respect to prior release. These devices offer the best I/sub off/-I/sub dsat/ performance reported so far for 1.2 V applications. To support high-speed I/O standards, additional 1.8 V-32 /spl Aring/ I/O devices are integrated with the 15.5 /spl Aring/ transistors. Leading-edge passive elements for MS/RF applications are reported in this work. Advanced Cu/low-k back end process integration that can support up to nine layers of metal is also demonstrated.
Keywords :
CMOS integrated circuits; UHF integrated circuits; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; mixed analogue-digital integrated circuits; very high speed integrated circuits; 0.13 micron; 1.2 V; 1.8 V; 15.5 angstrom; 32 angstrom; 75 nm; Cu; Cu/low-k back end process integration; RF application segment; core devices; extended CMOS technology; high-speed I/O standards; leading-edge passive elements; manufacturable CMOS foundry technology; metal layers; mixed signal application segment; off current-drain saturation current performance; performance improvement; physical gate lengths; technology features; ultra high-speed application segment; CMOS technology; Chaos; Foundries; Manufacturing industries; Pulp manufacturing; Radio frequency; Random access memory; Semiconductor device manufacture; Sun; Transistors;
Conference_Titel :
VLSI Technology, 2002. Digest of Technical Papers. 2002 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-7312-X
DOI :
10.1109/VLSIT.2002.1015391
