• DocumentCode
    1908832
  • Title

    Novel CF4+H2O ashing process for reduction of via resistance

  • Author

    Solis, Randy ; Harvey, Ian R. ; Gabriel, Calvin T.

  • Author_Institution
    VLSI Technol. Inc., San Antonio, TX, USA
  • fYear
    1997
  • fDate
    6-8 Oct 1997
  • Abstract
    This paper will describe the application of a new ashing chemistry incorporating H2O and CF4 for improved polymer strippability and reduced via resistance for deep submicron multilevel metalizations. Results are shown from integrating the ash into both 0.25 and 0.35 μm ASIC processes
  • Keywords
    VLSI; application specific integrated circuits; integrated circuit metallisation; sputter etching; 0.25 micron; 0.35 micron; ASIC processes; ashing process; deep submicron multilevel metalizations; polymer strippability; via resistance; Ash; Dry etching; Plasma applications; Plasma chemistry; Plasma temperature; Polymers; Resists; Solvents; Sputter etching; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-3752-2
  • Type

    conf

  • DOI
    10.1109/ISSM.1997.664602
  • Filename
    664602
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908832