Title :
Novel CF4+H2O ashing process for reduction of via resistance
Author :
Solis, Randy ; Harvey, Ian R. ; Gabriel, Calvin T.
Author_Institution :
VLSI Technol. Inc., San Antonio, TX, USA
Abstract :
This paper will describe the application of a new ashing chemistry incorporating H2O and CF4 for improved polymer strippability and reduced via resistance for deep submicron multilevel metalizations. Results are shown from integrating the ash into both 0.25 and 0.35 μm ASIC processes
Keywords :
VLSI; application specific integrated circuits; integrated circuit metallisation; sputter etching; 0.25 micron; 0.35 micron; ASIC processes; ashing process; deep submicron multilevel metalizations; polymer strippability; via resistance; Ash; Dry etching; Plasma applications; Plasma chemistry; Plasma temperature; Polymers; Resists; Solvents; Sputter etching; Tin;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3752-2
DOI :
10.1109/ISSM.1997.664602
