Title :
Simulation study of SOI four gate transistor
Author :
Debnath, Bishwajit ; Islam, M. Sariful ; Noor, Samantha Lubaba ; Hassan, Muhsiul ; Haq, A. F M Saniul ; Khan, M. Ziaur Rahman
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
The structure of silicon-on-insulator (SOI) four-gate transistor (G4-FET) and its different parameters for different biasing conditions are studied. A G4-FET simulation model was developed by Silvaco/Atlas 3-D simulator which incorporates non-ideal effects like concentration dependent mobility, Shockley-Read-Hall recombination, Auger recombination, bandgap narrowing effect. This model can be useful in measuring parameters dependency of a SOI four gate transistor.
Keywords :
Auger effect; field effect transistors; silicon-on-insulator; Auger recombination; G4-FET simulation model; SOI four gate transistor; Shockley-Read-Hall recombination; Silvaco/Atlas 3D simulator; bandgap narrowing effect; biasing condition; concentration dependent mobility; silicon-on-insulator four-gate transistor; CMOS integrated circuits; CMOS technology; Logic gates; Semiconductor device modeling; Transistors;
Conference_Titel :
Devices, Circuits and Systems (ICDCS), 2012 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4577-1545-7
DOI :
10.1109/ICDCSyst.2012.6188709
