• DocumentCode
    1908896
  • Title

    Simulation study of SOI four gate transistor

  • Author

    Debnath, Bishwajit ; Islam, M. Sariful ; Noor, Samantha Lubaba ; Hassan, Muhsiul ; Haq, A. F M Saniul ; Khan, M. Ziaur Rahman

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
  • fYear
    2012
  • fDate
    15-16 March 2012
  • Firstpage
    221
  • Lastpage
    225
  • Abstract
    The structure of silicon-on-insulator (SOI) four-gate transistor (G4-FET) and its different parameters for different biasing conditions are studied. A G4-FET simulation model was developed by Silvaco/Atlas 3-D simulator which incorporates non-ideal effects like concentration dependent mobility, Shockley-Read-Hall recombination, Auger recombination, bandgap narrowing effect. This model can be useful in measuring parameters dependency of a SOI four gate transistor.
  • Keywords
    Auger effect; field effect transistors; silicon-on-insulator; Auger recombination; G4-FET simulation model; SOI four gate transistor; Shockley-Read-Hall recombination; Silvaco/Atlas 3D simulator; bandgap narrowing effect; biasing condition; concentration dependent mobility; silicon-on-insulator four-gate transistor; CMOS integrated circuits; CMOS technology; Logic gates; Semiconductor device modeling; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems (ICDCS), 2012 International Conference on
  • Conference_Location
    Coimbatore
  • Print_ISBN
    978-1-4577-1545-7
  • Type

    conf

  • DOI
    10.1109/ICDCSyst.2012.6188709
  • Filename
    6188709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1908896